文件名称：VLSI Fabrication Principles, Silicon and Gallium Arsenide
文件大小：38.6MB
文件格式：PDF
更新时间：2015-01-27 15:51:24
Silicon and Gallium Arsenide
超大规模集成电路制造技术，同志们，超好的一本当代用书！ Summary: Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. Table of Contents: Material Properties. Phase Diagrams and Solid Solubility. Crystal Growth and Doping. Diffusion. Epitaxy. Ion Implantation. Native Films. Deposited Films. Etching and Cleaning. Lithographic Processes. Device and Circuit Fabrication. Appendix. Index.