Hetero-epitaxy of Lg=0.13-um metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

时间:2024-03-13 16:19:27
【文件属性】:

文件名称:Hetero-epitaxy of Lg=0.13-um metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

文件大小:1.87MB

文件格式:PDF

更新时间:2024-03-13 16:19:27

研究论文

Hetero-epitaxy of Lg=0.13-um metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications


网友评论