文件名称：飞思卡尔智能车
文件大小：292KB
文件格式：PDF
更新时间：2015-01-25 17:22:48
飞思卡尔
适用于参加飞思卡尔比赛，，One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense