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文件名称：论文研究-Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT.pdf
文件大小：293KB
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更新时间：2022-09-03 11:11:10
High K Gate Dielectric, Reliability,
超薄HfO2高K栅介质中电场依赖的时变击穿（TDDB）特性 ，杨红，萨宁，本文利用高温工艺制备了等效氧化层厚度（EOT）小于0.9纳米的超薄HfO2高K栅介质MOS器件，研究了其时变击穿（TDDB）特性。结果显示，其TDD
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