文件名称：DCDC效率计算工具
文件大小：4.1MB
文件格式：XLSM
更新时间：2022-01-29 07:46:13
fangzhen
DCDC仿真工具，Circuit parameters can be entered into the two spreadsheets titled “Circuit 1” and “Circuit 2”. In each of these spreadsheets, the circuit parameters are organized into five major regions, as indicated in the diagram below. Area 1 contains the topology parameters of the synchronous Buck converter, including Vin, Vout, Iout, fs, Iripple, and Vripple. Area 2 contains parameters specific to the driver device. Note that in this circuit, both the high-side and low-side MOSFETs share the same driver. Area 3 contains parameters specific to the circuit’s output inductor and capacitor. Finally, Areas 4 and 5 contain the parameters of the high-side and low-side MOSFETs. In this simulator, parameter values for high side and low side MOSFETs are preloaded to the spreadsheet "MOSFETs". Users have the flexibiligy to define new MOSFETs in spreadsheet "MOSFETs" and then use the user defined MOSFETs in spreadsheet "Circuit1" or "Circuit2". MOSFETs that are not defined in spreadsheet "MOSFETs" can not be simulated in this simulator.