射频微波GaN功放管

【文件属性】：
文件名称：射频微波GaN功放管
文件大小：223KB
文件格式：PDF
更新时间：2018-07-08 09:31:52
GaN The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any subband within the overall bandwidth.