go athena
line x loc=0 spacing=1
line x loc=20 spacing=1
line y loc=0 spacing=0.005
line y loc=0.5 spacing=0.0125
init two.d silicon c.boron=1e15
deposit oxide thickness=0.005 div=2
etch oxide start x=4 y=-0.01
etch continue x=4 y=0
etch continue x=16 y=0
etch done x=16 y=-0.01
implant phosph dose=1e14 energy=50
deposit material=3C-SiC thickness=0.01 div=2
deposit alum thickness=0.02 div=5
etch alum x=4 right
electrode x=1 name=anode
structure flip.y
deposit alum thickness=0.1 div=5
electrode x=0 name=cathode
structure flip.y
structure outfile=graphene_silicon.str
go atlas
init infile=graphene_silicon.str
material material=3C-SiC \
permitti=3.3 \
eg300=0 \
NC300=3e10 \
NV300=3e10 \
MUN=1e3 \
MUP=1e3 \
affinity=4.248 \
VSATURATION=3e7
structure outfile=graphene_silicon.str
tonyplot graphene_silicon.str
log outfile=graphene_silicon.log
solve vcathode=-3 vstep=0.3 vfinal=3 name=cathode
tonyplot graphene_silicon.log
