文件名称：sram_sp_hse_8kx8.pdf
文件大小：49KB
文件格式：PDF
更新时间：2022-12-07 12:48:04
SRAM 8kx8
Precise Optimization for TSMC’s Six-Layer Metal 0.18µm CL018G CMOS Process • High Density (area is 0.496mm2) • Fast Access Time (1.51ns at fast@0C process, 1.98V, 0˚C) • Fast Cycle Time (1.51ns at fast@0C process, 1.98V, 0˚C) • One Read/Write Port • Completely Static Operation • Near-Zero Hold Time (Data, Address, and Control Inputs) Memory Description The 8192X8 SRAM is a high-performance, synchronous single-port, 8192-word by 8-bit memory designed to take full advantage of TSMC’s six-layer met