Mm/sub-mm Bolometer Based on Electron Heating in Narrow-gap Semiconductor (2010年)

时间:2024-05-12 13:59:51
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文件名称:Mm/sub-mm Bolometer Based on Electron Heating in Narrow-gap Semiconductor (2010年)

文件大小:333KB

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更新时间:2024-05-12 13:59:51

工程技术 论文

Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1-xCdxTe semiconductor bolometers that can be used as picture elements in THz sensitive arrays, are considered. The response of Hg1-xCdxTe warm-electron bolometers was measured in ν=0.037-1


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