micromachines-11-00222.pdf

时间:2023-08-01 06:34:39
【文件属性】:

文件名称:micromachines-11-00222.pdf

文件大小:5.88MB

文件格式:PDF

更新时间:2023-08-01 06:34:39

GaN

Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications


网友评论