文件名称:micromachines-11-00222.pdf
文件大小:5.88MB
文件格式:PDF
更新时间:2023-08-01 06:34:39
GaN
Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
文件名称:micromachines-11-00222.pdf
文件大小:5.88MB
文件格式:PDF
更新时间:2023-08-01 06:34:39
GaN
Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications