文件名称：High_efficiency_Class-E_tuned_Doherty_amplifier_using_GaN_HEMT.pdf
文件大小：1.13MB
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更新时间：2023-06-26 04:57:05
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Class E论文，非常经典，值得一看。 Abstract — This paper describes the design and fabrication of a highly efficient switching-mode Class-E Doherty power amplifier using gallium nitride (GaN) highelectron mobility transistor (HEMT) for S-band radar applications. Measured results of the Doherty amplifier show power-added efficiency (PAE) and drain efficiency of 62.6% and 73.1% at 37 dBm of 6 dB output back-off point from saturated output power at 2.85 GHz, compared with PAE and drain efficiency of 42.9% and 44.7% for the case of balanced amplifier. It was found that PAE was improved by 19.7% by adopting the Doherty efficiency enhancement technique.