文件名称：SiC Diodes - Silicon Carbide Design Rules.pdf
文件大小：785KB
文件格式：PDF
更新时间：2023-11-08 16:33:54
SICDIODE
The close-to-ideal properties of novel silicon carbide Schottky diodes (thinQ!™), that can reach higher blocking voltages than the actual Silicon Schottky limit of 250V, are well suited for hard switching commutation. In order to maximize the benefit from these characteristics, a different design-i