文件名称:论文研究-Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs.pdf
文件大小:373KB
文件格式:PDF
更新时间:2022-09-04 05:51:30
High-k;Gate current;Quantum-mechanical model
铪基高k栅介质纳米MOSFET栅电流模拟分析,王伟,孙建平,运用一种量子模型研究铪基高k栅介质纳米MOSFET栅隧穿电流,对栅电流中的三维电流成分用行波统一地计算热发射电流、通过介质势垒的FN