论文研究-Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs.pdf

时间:2022-09-04 05:51:30
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文件名称:论文研究-Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs.pdf

文件大小:373KB

文件格式:PDF

更新时间:2022-09-04 05:51:30

High-k;Gate current;Quantum-mechanical model

铪基高k栅介质纳米MOSFET栅电流模拟分析,王伟,孙建平,运用一种量子模型研究铪基高k栅介质纳米MOSFET栅隧穿电流,对栅电流中的三维电流成分用行波统一地计算热发射电流、通过介质势垒的FN


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