【文件属性】：
文件名称：新型横向IGBT资料
文件大小：285KB
文件格式：PDF
更新时间：2015-05-02 04:39:19
横向IGBT
胡浩与陈星弼的最新研究Abstract: A novel lateral IGBT with a second gate on the emitter portion is presented. A PMOS transistor, driven
by the proposed device itself, is used to short the PN junction at the emitter while turned off. Low on state voltage
and fast turn off speed are obtained without side-effects such as snapback I –V characteristics and difficulties of
process complexity. Numerical simulation results show a drop of fall time from 120 to 12 ns and no increase of on
state voltage.