文件名称：crossbar 电路设计
文件大小：319KB
文件格式：PDF
更新时间：2012-03-04 06:06:53
crossbar
crossbar 电路设计 Molecular electronics offer an alternative pathway to construct nanoscale circuits in which the critical dimension is naturally associated with molecular sizes. We describe the fabrication and testing of nanoscale molecular-electronic circuits that comprise a molecular monolayer of [2]rotaxanes sandwiched between metal nanowires to form an 8 × 8 crossbar within a 1 μm2 area. The resistance at each cross point of the crossbar can be switched reversibly. By using each cross point as an active memory cell, crossbar circuits were operated as rewritable, nonvolatile memory with a density of 6.4 Gbits cm−2. By setting the resistances at specific cross points, two 4 × 4 subarrays of the crossbar were configured to be a nanoscale demultiplexer and multiplexer that were used to read memory bits in a third subarray.