【文件属性】：
文件名称：A Review on Power MOSFET Device Structures
文件大小：988KB
文件格式：PDF
更新时间：2021-06-23 04:43:50
power mos semiconducto
The paper presents the comprehensive review on the various Power MOSFET structures that have been developed during the past decade. Various structures of Power MOSFET like LDMOS, VDMOS, V-Groove MOS, Trench Gate MOS,
FLIMOS, SJ-MOS, and Strained Si MOS are studied and issues related to their performance are analyzed on the basis of
following parameters: on-state resistance and breakdown voltage mainly, as trade-off should be maintained between them while
designing the structure of Power MOSFET. The on-resistance should be low at high breakdown voltage for enhancing the
performance of MOSFET device.