文件名称：CS540数据手册
文件大小：534KB
文件格式：PDF
更新时间：2021-08-16 11:19:46
数据参考
关于CS540稳压芯片的数据手册 General Description： CS540 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100%Single Pulse avalanche energy Test