文件名称：0.84-THz Imaging Pixel with a Lock-in Amplifier in CMOS
文件大小：912KB
文件格式：PDF
更新时间：2020-12-22 04:12:01
Terahertz, imaging, lock-in amplifier, quadrature
An 840-GHz Schottky diode detector is integrated with an analog lock-in amplifier in 130-nm bulk CMOS. The integrated lock-in amplifier can support a modulation frequency of up to 10MHz with a gain of 54dB, a dynamic range of 42dB, and an input referred noise of less than 10 nV/ √Hz at modulation frequencies higher than 100kHz. The integrated lock-in amplifier occupies an area of 0.17 mm2 and consumes 4.9mA from a 1.2-V supply. The detector and on-chip lock-in amplifier combination was used to form terahertz images.