三星(Samsung) NAND Flash列表 关键字:器件 NAND-Flash Samsung
型号
|
结构
|
页结构
|
块结构
|
工作电压(V)
|
温度
|
读速度
(nS)
|
封装
|
生产状态
|
注释
|
8Gb
|
K9W8G08U1M
|
1M x 8
|
|
|
2.7 ~ 3.6
|
C,I
|
50
|
48TSOP1
|
工程样品
|
90nm Dual die
(4G DDP x 2)
|
4Gb
|
K9K4G08QA0M
|
512M x 8
|
|
|
1.70 ~ 1.95
|
C,I
|
50
|
48TSOP1
|
工程样品
|
90nm Dual die
|
K9K4G08U0M
|
|
|
2.7 ~ 3.6
|
工程样品
|
K9W4G08U1M
|
|
|
量产
|
0.12µm Dual die
(2G DDP x 2)
|
K9K4G16Q0M
|
256M x 16
|
|
|
1.70 ~ 1.95
|
50
|
工程样品
|
90nm Dual die
|
K9K4G16U0M
|
|
|
2.7 ~ 3.6
|
工程样品
|
K9W4G16U1M
|
|
|
量产
|
0.12µm Dual die
(2G DDP x 2)
|
2Gb
|
K9F2G08U0M
|
256M x 8
|
|
|
2.7 ~ 3.6
|
C,I
|
50
|
48TSOP1
|
Jan. '04样品
|
90nm
|
K9K2G08U0M
|
|
|
80
|
量产
|
0.12µm
Dual die
|
K9K2G08Q0M
|
|
|
1.70 ~ 1.95
|
50
|
量产
|
K9F2G08Q0M
|
|
|
工程样片
|
90nm
|
K9K2G16U0M
|
128M x 16
|
|
|
2.7 ~ 3.6
|
C,I
|
50
|
48TSOP1
|
量产
|
0.12µm
Dual die
|
K9K2G16Q0M
|
|
|
1.70 ~ 1.95
|
80
|
工程样片
|
K9F2G16Q0M
|
|
|
1.70 ~ 1.95
|
50
|
工程样片
|
90nm
|
K9F2G16U0M
|
|
|
2.7 ~ 3.6
|
Jan.'04样品
|
1Gb
|
K9F1G08Q0A
|
128M x 8
|
|
|
1.70 ~ 1.95
|
C,I
|
50
|
48TSOP1
|
开发中
|
-
|
K9F1G08D0A
|
|
|
2.4 ~ 2.9
|
K9F1G08U0A
|
|
|
2.7 ~ 3.6
|
48TSOP1,
48WSOP1
|
K9K1G08Q0A
|
|
|
1.70 ~ 1.95
|
60
|
48TSOP1,
63TBGA
|
已量产
|
0.12µm,双硅片
(512Mb x 2)
|
K9F1G08U0A
|
|
|
2.7 ~ 3.6
|
50
|
48TSOP1,
48WSOP1,
63TBGA
|
48TSOP1
|
K9F1G08D0M
|
|
|
2.4 ~ 2.9
|
0.12µm
|
K9F1G08Q0M
|
|
|
1.70 ~ 1.95
|
K9F1G08U0M
|
|
|
2.7 ~ 3.6
|
48TSOP1,
48WSOP1
|
K9K1G08U0M
|
|
|
48TSOP1
|
0.15µm,双硅片
(512Mb x 2)
|
K9K1G16Q0A
|
128M x 16
|
|
|
1.7 ~ 1.95
|
C,I
|
60
|
48TSOP1,
63TBGA
|
已量产
|
0.15µm,双硅片
(512Mb x 2)
|
K9K1G16U0A
|
64M x 16
|
|
|
2.7 ~ 3.6
|
C,I
|
50
|
48TSOP1
|
已量产
|
0.15µm,双硅片
(512Mb x 2)
|
K9F1G16D0M
|
2.4 ~ 2.9
|
0.12µm
|
K9F1G16Q0M
|
|
|
1.70 ~ 1.95
|
80
|
K9F1G16U0M
|
|
|
2.7 ~ 3.6
|
50
|
512Mb
|
K9F1208Q0B
|
64M x 8
|
|
|
1.7~1.95
|
C,I
|
50
|
63TBGA
|
开发中
|
-
|
K9F1208U0B
|
|
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA,
48WSOP1
|
-
|
K9F1208D0B
|
|
|
2.4 ~ 2.9
|
48TSOP1,
63TBGA
|
-
|
K9F1208D0C
|
|
|
2.4 ~ 2.9
|
63TBGA
|
已量产
|
0.12µm,双硅片
(256Mb x 2)
|
K9F1208Q0C
|
|
|
1.7~1.95
|
K9F1208U0C
|
|
2.7 ~ 3.6
|
K9F1208D0A
|
|
|
2.4 ~ 2.9
|
48TSOP1
|
Being phased out, MCP only
|
0.12µm
|
K9F1208U0A
|
2.7 ~ 3.6
|
48TSOP1,
48WSOP
|
已量产
|
K9F1208Q0A
|
1.7 ~ 1.95
|
60
|
48TSOP1,
63TBGA,
48WSOP1
|
Being phased out, MCP only
|
0.12µm
|
K9F1208U0M
|
2.7 ~ 3.6
|
50
|
48TSOP1
|
已量产
|
0.15µm
|
K9F1216D0C
|
32M x 8
|
|
|
2.4 ~ 2.9
|
|
50
|
63TBGA
|
已量产
|
0.12µm,双硅片
(256Mb x 2)
|
K9F1216Q0C
|
|
|
1.7 ~ 1.95
|
60
|
K9F1216U0C
|
|
|
2.7 ~ 3.6
|
50
|
K9F1216D0A
|
|
|
2.4 ~ 2.9
|
50
|
48TSOP1
|
0.12µm
|
K9F1216Q0A
|
|
|
1.7 ~ 1.95
|
60
|
63TBGA
|
Jun. '04量产
|
0.12µm
|
K9F1216U0A
|
|
|
2.7 ~ 3.6
|
50
|
48TSOP1
|
已量产
|
0.15µm
|
256Mb
|
K9F5608D0C
|
32M x 8
|
|
|
2.4 ~ 2.9
|
C,I
|
50
|
48TSOP1,
63TBGA
|
已量产
|
0.12µm
|
K9F5608Q0C
|
|
|
1.7 ~ 1.95
|
63TBGA
|
K9F5608Q0C
|
|
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA,
48WSOP
|
K9F5608Q0B
|
|
|
1.7 ~ 1.9
|
63TBGA
|
0.15µm
|
K9F5608U0B
|
|
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA,
48WSOP
|
K9F5608U0A
|
|
|
48TSOP1
|
0.18µm
|
K9F5616Q0C
|
16M x 16
|
|
|
1.7~1.95
|
63TBGA
|
0.12µm
|
K9F5616U0C
|
|
|
2.7 ~3.6
|
48TSOP1,
63TBGA,
48WSOP1
|
K9F5616Q0B
|
|
|
1.65 ~ 1.95
|
63TBGA
|
0.15µm
|
K9F5616U0B
|
|
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA
|
128Mb
|
K9F2808Q0C
|
16M x 8
|
|
|
1.7 ~ 1.9
|
C,I
|
50
|
63TBGA
|
Jun. '04量产
|
0.12µm
|
K9F2808U0C
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA
48WSOP1
|
已量产
|
K9F2808U0C
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA
48WSOP1
|
Jun.'04可量产 TBGA
|
0.15µm
|
K9F2816Q0C
|
8M x 16
|
|
|
1.7 ~ 1.9
|
63TBGA
|
Jun. '04量产
|
0.12µm
|
K9F2808U0B
|
2.7 ~ 3.6
|
48TSOP1,
63TBGA
|
已量产
|
K9F2808U0A
|
1.7 ~ 1.95
|
63TBGA
|
Jun. '04量产
|
0.15µm
|
64Mb
|
K9F6408Q0C
|
8M x 8
|
|
|
1.65 ~ 1.95
|
C,I
|
50
|
48TBGA
|
Engineering Sample
|
0.15µm
|
K9F6408Q0C
|
2.7 ~ 3.6
|
44TSOP2
|
K9F6408Q0C
|
Mass
Production
|
0.22µm
|
K9F6408Q0C
|
Begin
Phased out
|
0.27µm
|
32Mb
|
...略
|
16Mb
|
...略
|
8Mb
|
...略
|
4Mb
|
...略
|
[Note]
1.Operating Temperature(Celsius); C: Commercial(0°C~70°C), I: Industrial(-40°C~85°C)
2.To get pinout and package
更新时间:
03-12-21
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